Defects and Electrical Properties of Crystalline Silicon at Different Metallurgical Route

Abstract:

To investigate the effects of the metallurgical route on the defects in mc-Si, various metallurgical routes were conducted. Dislocation formation and the resistivity of the mc-Si were also studied. The results showed that high inhomogeneity in dislocation distribution within individual grains and paralleled tacking faults could be observed when the ingot was grown by using the feedstock prepared by adopting the sequence of slag treatment, acid leaching and vacuum refining. Different grains have various dislocation density, which was showed in ingot grown by utilizing the feedstock prepared by adopting the sequence of vacuum refining, slag treatment and acid leaching, tacking faults could also be seen, as well as some dislocation clusters. The resistivity of this two ingots was detected at various height by using the a 4-point probe silicon tester, it was expected that the resistivity of these two ingots has the same tendency of the change, and the value of the resistivity of the ingot obtained using the previous technology was relatively higher than that of the ingot obtained using the latter technology.

• Periodical: Applied Mechanics and Materials (Volume 420)
• Pages: 134-138
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.420.134
• Online since: September 2013
• Authors: Hui Xian Lai, Liu Qing Huang, Ming Fang, Cheng Hao Lu, Juan Chen, De Qin Yu, Jin Tang Li, Wen Hui Ma, Jian Ning Shen, Zhi Lin Sheng, Xue Tao Luo
• Keywords: Dislocation, Metallurgical Route, Metallurgical-Grade Silicon, Multi-Crystalline Silicon, Resistivity

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