The Design of a 1~13 GHz GaAs Travelling Wave Amplifier

Abstract:

A 4-stage travelling wave amplifier with 10dB ± 1.2 dB gain and 12 GHz bandwidth is presented in the paper. The parameters of the small signal equivalent model about the GaAs PHEMT are extracted to evaluate the characterization of the device, which is also used to design the amplifier. The amplifier has a minimum noise figure lower than 4.8 dB in the frequency range, and the S₁₁ and S₂₂ are below-10 dB and-7 dB, which demonstrate a good performance. The P_1dB and IIP3 are 7.3 dBm and 24 dBm, respectively, and the saturation output power is above 20 dBm at 13 GHz.

• Periodical: Applied Mechanics and Materials (Volumes 427-429)
• Pages: 1080-1084
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.427-429.1080
• Online since: September 2013
• Authors: Yan Pu*, Guo Qiang Wang, Zheng Rong He, Lin Tao Liu
• Keywords: GaAs PHEMT, LNA, Travelling Wave Amplifier, Wideband

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