A New TIGBT Device with Hole Bypass Emitter and Simulationuse

Yan Xiong; Lai Yu Shu

doi:10.4028/www.scientific.net/AMM.427-429.1105

Paper Titles

Control of Robot Manipulators Based on Legendre Orthogonal Neural Network
p.1089

A Detection Scheme against Node Replication Attack in Wireless Sensor Network Based on Bloom Filter and QR Decomposition
p.1093

A Sub-1V High Precision CMOS Bandgap Reference
p.1097

Synchronization of Chaotic Gyro Systems via Sliding Mode Control with Cooperative Weights Neural Network
p.1101

A New TIGBT Device with Hole Bypass Emitter and Simulationuse
p.1105

Desynchronization of the Chaotic-Bursting Neuronal Ensemble Based on LaSalle Invariant Principle
p.1109

Six-Dimensional Automatic Sample Introduction System for Mass Spectrometer
p.1113

Research on Continuous Emission Monitoring System in Thermal Power Plant
p.1117

Classification Algorithm of Regression Support Vector Machine and its Application to Environment Monitoring in Water Culture Plants
p.1121

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 427-429A New TIGBT Device with Hole Bypass Emitter and...

A New TIGBT Device with Hole Bypass Emitter and Simulationuse

Abstract:

In this paper, a new TIGBT device with Hole Bypass Emitter was proposed. Compared with traditional TIGBT, the new structure introduce a P+ hole bypass region under trench metal emitter. Simulation results by SILVACO show that the new structure suppress latch-up effectively and allow wider Safe Operation Area (SOA) as well as higher security current without latch-up and have better temperature stability. In addition, all the impurity implantations in this structure need no extra mask, it is very convenient for fabrication.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volumes 427-429)

Pages:

1105-1108

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.427-429.1105

Citation:

Cite this paper

Online since:

September 2013

Authors:

Yan Xiong*, Lai Yu Shu

Keywords:

Latch-Up (LU), SOA, TIGBT

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] B. J. Baliga, Power Semiconductor Devices, PWS publishing company, Boston, 490 (1996).

Google Scholar

[2] Vinod Kumar Kbanna, The Insulated Gate Bipolar Transistor IGBT Theory AND Design, IEEE Press, Piscataway, p.303 (2003).

DOI: 10.1002/047172291x.ch6

Google Scholar

[3] Wuchen Wu, Guo Gao, Limin Dong, Thermal Reliability of Power Insulated Gate Bipolar Transistor (IGBT) Modules, IEEE, p.136~141 (1996).

DOI: 10.1109/stherm.1996.545103

Google Scholar

[4] ATLAS User's Manual, SILVACO International, TCAD Business Unit, (2007).

Google Scholar

[5] T. Laska, M. Miinzer, F. Pfirsch,C. Schaeffer,T. Schmidt, The Field Stop IGBT (FS IGBT) - ANew Power Device Concept with a Great Improvement Potential, ISPSD. 2000, Page(s): 355~358.

DOI: 10.1109/ispsd.2000.856842

Google Scholar

[6] Nakayama. K, Nakagawa. A, A study on IGBT's steady state SOA with newly developed simulation, Proc. ISPSD, 1992 Page(s): 34~38.

Google Scholar