The Source Pick-Up Effect of Multi-Finger GDpMOSTs on ESD/LU Immunities in a 3.3V 0.35μm Process

Abstract:

This paper presents an evaluation of source N⁺ pick-up influence on ESD/LU immunities for the 0.35μm 3.3V low-voltage pMOSFET devices. It is found that when the stripe number of source N⁺ pick-up increased, the trigger voltage (V_t1) and holding voltage (V_h) values will be increased, too. Finally, the I_t2 value of DUT_Pick-up×5 as compared with a DUT_{Wo pick-up}(reference group) is decreased by 10%. Therefore, it can be concluded that the contribution of source N⁺ pick-up for I_t2 was not remarkable and recommended in this 0.35μm 3.3V process. Additionally, the V_h value of DUT_Pick-up×5 as compared with a DUT_{Wo pick-up}(reference group) is increased by 9.4%, the source N⁺ pick-up process can effectively strengthen the latch-up immunity.

• Periodical: Applied Mechanics and Materials (Volumes 427-429)
• Pages: 1154-1157
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.427-429.1154
• Online since: September 2013
• Authors: Shen Li Chen*, Min Hua Lee
• Keywords: Breakdown Trigger Voltage (V_t1), Electrostatic Discharge (ESD), Holding Voltage (V_h), Latch-Up (LU) Effect, Pick-Up, Secondary Breakdown Current ( I_t2)

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