Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

Mohammad Jahangir Alam; Mohammad Ziaur Rahman

doi:10.4028/www.scientific.net/AMM.440.82

Paper Titles

Study on Optical Properties of Carbon Nanoparticles
p.61

VOCs Sensing Property of Graphene Oxide Thin Film by Reduction Rate
p.64

The "Black Revolution" of Sports Equipment: Application of Carbon Fiber Reinforced Plastics (CFRP)
p.69

Analytical Test Methods Used to Characterize Granular Composite Sport Surface Materials
p.74

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon
p.82

Wear Behavior of Zirconium Oxide (ZrO₂) Coating over the Surface of Electro Less Nickel Plating on Tool Steel Substrate
p.88

Stress and Strain Characteristics of Aluminum Equal Channel Angular Pressing
p.92

Recovery of Valuable Metals from Spent Hydrogenation Catalysts
p.97

Aluminum Lithium Alloys (Al-Li-Cu-X)-New Generation Material for Aerospace Applications
p.104

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 440Correlation of Fe-Rich Defect Centre and Minority...

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

Abstract:

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

You might also be interested in these eBooks

Advanced Materials & Sports Equipment Design

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volume 440)

Pages:

82-87

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.440.82

Citation:

Cite this paper

Online since:

October 2013

Authors:

Mohammad Jahangir Alam*, Mohammad Ziaur Rahman

Keywords:

Defect, Iron, Lifetime, Multicrystalline Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Klaus Graff, Metal impurities in silicon-device fabrication, Springer-Verlag, Berlin, (1995).

Google Scholar

[2] J. Schön, H. Habenicht, M. C. Schubert, and W. Warta, Solid State Phenomena 156-158, 223-228 (2009).

DOI: 10.4028/www.scientific.net/ssp.156-158.223

Google Scholar

[3] S. Rein, Lifetime spectroscopy: A method of defect characterization in silicon for photovoltaic applications, Springer 2004, Berlin, Germany.

Google Scholar

[4] J. Dziewior, W. Schimd, Auger coefficients for highly doped and highly excited silicon, Appl. Phys. Lett. 31 (5) 346-8, (1997).

DOI: 10.1063/1.89694

Google Scholar

[5] R. Hall, Electron-hole recombination in germanium, Physics Review 87 (1952) 387.

Google Scholar

[6] W. Shockley , W. Read, Statistics of the recombinations of holes and electrons, Physical Rev. 87 (1952) 835-842.

DOI: 10.1103/physrev.87.835

Google Scholar

[7] V. Grivickas, D. Noreika, J.A. Tellefsen, Surface and Auger recombination in silicon wafers of high carrier density, Lithunian Physics Journal 29 (5), 48-53, (1989).

Google Scholar

[8] H. Habenicht et al, Outdiffusion of metal from grain boundaries in multicrystalline silicon during thermal processing, in: proc. 22nd EUPVSEC, Italy (2007), p.1519 – 1523.

Google Scholar

[9] M. C. Schubert et al, Determination of spatially resolved trapping parameters in silicon with injection dependent carrier density imaging, J. Appl. Phys. 99, 114908 (2006).

DOI: 10.1063/1.2202729

Google Scholar

[10] P. Pohl et al, Defect imaging in multicrystalline silicon using lock-in infrared camera technique, J. Appl. Phys. 101, 073701 (2007).

DOI: 10.1063/1.2713933

Google Scholar

[11] M. C. Schubert and W. Warta, Prediction of diffusion length in multicrystalline silicon solar cells from trapping images of starting material, Prog. Photovolt. 15, 331(2007).

DOI: 10.1002/pip.738

Google Scholar

[12] P. Gundel et al, Origin of trapping in multicrystalline silicon, J. Appl. Phys. 104, 073716 (2008).

DOI: 10.1063/1.2990053

Google Scholar