Numerical Simulation on the Heat Transfer Performance of Multicrystalline Silicon in Directional Solidification Process

Abstract:

The temperature distribution has important influence on the position and shape of solid-liquid interface during directional solidification process. So the calculation of temperature field is fairly significant for both structural analysis and temperature control. In this paper, the finite element method is applied to establish the 2D axisymmetric model for modeling the temperature distribution and the solid-liquid interface shape of multicrystalline silicon in semi-industrial directional solidification furnace. The numerical results show that the temperature field and solid-liquid interface shape can be controlled by adjusting the pulling rate in directional solidification process, and an optimized pulling rate of this system was obtained for large diameter silicon crystals with low defect density and uniform dopant distribution.

• Periodical: Applied Mechanics and Materials (Volumes 444-445)
• Pages: 1412-1416
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.444-445.1412
• Online since: October 2013
• Authors: Xi Yang, Ming Li, Wen Hui Ma, Guo Qiang Lv, Tao Luo, Yi Fei Wang
• Keywords: Directional Solidification, Multicrystalline Silicon, Numerical Simulation, Pulling Rate

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