Fluid Dynamic Simulations on Polysilicon Production

Abstract:

Numerical simulations of transport phenomena is one of the valid methods in investigation of crystal silicon growth by CVD for various types of reactors. The present review provides the key summary on the development of fluid dynamic simulations on polysilicon of CVD and hopefully aid in future improvement of this technology. In the solution of CVD reactor models for polysilicon production, the influence of the deposition process on temperature, the transport phenomena and the surface reactions have to be taken into account when discussing the silicon growth rate.

• Periodical: Applied Mechanics and Materials (Volumes 444-445)
• Pages: 991-995
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.444-445.991
• Online since: October 2013
• Authors: Zhi Feng Nie, Gang Xie, Yan Qing Hou, Yan Cui, Rong Xing Li, Zhan Lian Yu
• Keywords: CVD, Deposition Model, Fluid Dynamic Simulations, Polysilicon

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