Photoluminescence Properties of ZnO Thin Film Prepared by Sol-Gel Route

Yong Jin Hu; Wu Yun Pei; Liu Guo Ying; Luo Shi Jun

doi:10.4028/www.scientific.net/AMM.456.411

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 456Photoluminescence Properties of ZnO Thin Film...

Photoluminescence Properties of ZnO Thin Film Prepared by Sol-Gel Route

Abstract:

Temperature dependent photoluminescence (PL) properties of ZnO thin film prepared by sol-gel route were investigated. The excitonic-related emission peak at 3.336 eV dominates the spectra, and is attributed to the recombination of excitons bound to structural defects (DBX). Moreover, its thermal activation energy is 5.7 meV obtained by using least-squares fitting method. Compared to its larger localization energy, we propose that there exists a nonradiative relaxation path with energy released during the formation of DBX. The observed peak position of blue emission is in line with theoretical energy interval between the interstitial zinc level and valence band.

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Applied Mechanics and Materials (Volume 456)

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411-415

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https://doi.org/10.4028/www.scientific.net/AMM.456.411

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October 2013

Authors:

Yong Jin Hu, Wu Yun Pei, Liu Guo Ying, Luo Shi Jun

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Interstitial Zinc, Photoluminescence (PL), Structural Defects, ZnO Thin Film

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References

[1] D. C. Look, Mater. Sci. Eng. B 80(2001), p.383.

Google Scholar

[2] U. Ozgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho and H. Morkoc, J. Appl. Phys. 98(2005), p.041301.

Google Scholar

[3] K. K. Kim, S. H. Niki, J. Y. Oh, J. O. Song, T. Y. Seong and S. J. Park, J. Appl. Phys. 97(2005), p.066103.

Google Scholar

[4] M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo and P. D. Yang, Science 292(2001), p.1897.

DOI: 10.1126/science.1060367

Google Scholar

[5] H. B. Zeng, Z. G. Li, W. P. Cai, B. Q. Cao, P. S. Liu and S. K. Yang, J. Phys. Chem. B 111(2007), p.14311.

Google Scholar

[6] K. Tamura, T. Makino, A. Tsukazaki, M. Sumiya, S. Fuke, T. Furumochi, M. Lippmaa, C. H. Chia, Y. Segawa, H. Koinuma and M. Kawasaki, Solid State Commun. 127(2003), p.265.

DOI: 10.1016/s0038-1098(03)00424-1

Google Scholar

[7] B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Strabburg, M. Dworzak, U. Haboeck and A. V. Rodina, Phys. Stat. Sol. B 241(2004), p.231.

DOI: 10.1002/pssb.200301962

Google Scholar

[8] J. Fallert, R. Hauschild, F. Stelzl, A. Urban, M. K. Wissinger, H. J. Zhou, C. K. Shirn and H. Kalt, J. Appl. Phys. 101(2007), p.073506.

DOI: 10.1063/1.2718290

Google Scholar

[9] J. Petersen, C. Brimont, M. Gallart, O. Cregut, G. Schmerber, P. Gilliot, B. Honerlage, C. Ulhaq-Bouillet, J. L. Rehspringer, C. Leuvrey, S. Colis, H. Aubriet, C. Becker, D. Ruch, A. Slaoui and A. Dinia, J. Appl. Phys. 104(2008), p.113539.

DOI: 10.1063/1.3021358

Google Scholar

[10] W. Y. Su, J. S. Huang and C. F. Lin, Journal of Crystal Growth 310(2008), p.2806.

Google Scholar

[11] T. Makino, K. Tamura, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo and H. Koinuma, J. Appl. Phys. 93(2003), p.5929.

Google Scholar

[12] B. X. Lin, Z. X. Fu and Y. B. Jia, Appl. Phys. Lett. 79(2001), p.943.

Google Scholar

[13] S. B. Zhang, S. H. Wei and A. Zunger, Phys. Rev. B 63(2001), p.075205.

Google Scholar

[14] D. H. Zhang, Z. Y. Xue and Q. P. Wang, Mater. Chem. Phys. 45(1996), p.248.

Google Scholar