Design and Simulation of a High-Isolation Series/Shunt Mixed MEMS Switch

Abstract:

In this paper, a novel high isolation switch was designed and optimized on high-resistance silicon substrate with all-metal beams. The RF MEMS switch was modeled with gold surface micro-fabrication process. To obtain a low actuation voltage and a better isolation, a folded structure in the shunt part of the switch and a short capacitance in the series part were designed, respectively. By combining the series and shunt switches, the mixed structure offered a wide range (DC-40GHz) with excellent isolation better than-35dB and insertion loss less than 0.72dB at the same range, making it promising for applications with wide frequency bands.

• Periodical: Applied Mechanics and Materials (Volumes 457-458)
• Pages: 1644-1647
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.457-458.1644
• Online since: October 2013
• Authors: Zhong Liang Deng, Sen Fan*, Hao Wei, Cai Hu Chen, Hua Gong
• Keywords: Equivalent Circuit, High-Isolation, Mixed Switch, RF MEMS, Simulation

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