Direct Growth of Graphene on SiO2 by Using Ga-Ni Flux

Qiang Yu; Jing Cun Zhang; Bing Cao; Shun Yu He; Chin Hua Wang; Ji Cai Zhang; Jian Feng Wang; Ke Xu

doi:10.4028/www.scientific.net/AMM.477-478.1242

Paper Titles

Non-Linear Modeling of Single-Walled Carbon Nanotubes
p.1225

Production and Properties of Mononuclear Microcapsules Encapsulating Cinnamon Oil by Complex Coacervation
p.1229

Influence of Free Volume on Residual Solvents of SiO₂ Modified Polypropylene Films
p.1234

Preparation of the Al₂O₃/3Y-TZP Ceramics by Microwave Sintering under Low Temperature
p.1238

Direct Growth of Graphene on SiO2 by Using Ga-Ni Flux
p.1242

Synthesis of Monodispersed Lauric Acid Capped Silver Nanoparticles by Wet-Chemical Reduction Method
p.1246

Investigation of Structure and Performance of SAE4330 Steel
p.1255

Crystallization Kinetics Analysis and SPS Consolidation of Mechanical Alloyed Fe₇₉Ti₁₆P₅ Amorphous Powders
p.1259

Assessment of Fatigue Life of Ni-Ti Samples Prepared by Different Techniques
p.1264

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 477-478Direct Growth of Graphene on SiO2 by Using Ga-Ni...

Direct Growth of Graphene on SiO2 by Using Ga-Ni Flux

Abstract:

A new growth method of graphene directly on the bare dielectric substrates by CVD (Chemical Vapor Deposition) method with Ga-Ni flux as sacrificial layer is reported in this work. Ga-Ni flux acts as not only a container to store carbon atoms which are dissolved from amourphous carbon film when heated, but also as a catalyst to promote the formation of graphene when cooled. In the process of growth, the Ga-Ni flux dewets and evaporates during the rearrangement of carbon atoms, resulting in graphene synthesized directly on the bare dielectric substrates. Scanning Raman Mapping and Spectroscopy, Scanning Electron Microscopy, and Atomic Force Microscopy were adopted to characterize the graphene film.