Atomic Layer Deposition of Molybdenum Oxide for Solar Cell Application

Dip K. Nandi; Shaibal K. Sarkar

doi:10.4028/www.scientific.net/AMM.492.375

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Preparation and Electrochemical Performance of Praseodymium Doped SnO₂ Particles as Negative Electrode Material of Lithium-Ion Battery
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Atomic Layer Deposition of Molybdenum Oxide for Solar Cell Application
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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 492Atomic Layer Deposition of Molybdenum Oxide for...

Atomic Layer Deposition of Molybdenum Oxide for Solar Cell Application

Abstract:

This work focuses on synthesis of molybdenum oxide (MoO₃) by Atomic layer deposition (ALD) using molybdenum hexacarbonyl [Mo (CO)₆] and ozone. In-situ growth characteresticswerestudied by Quartz Crystal Microbalance (QCM). ALD temperature window for this material lies between 165 to 175°C giving a maximum growth rate of 0.45 Å per ALD cycle. Negligible nucleation was found by QCM studyindicating a linear growth of the film. Effect of different oxidants on the growth rate is also studied.As-deposited film is amorphous in nature which converts to monoclinic-MoO₃ after annealing as seen by taransmission electron microscopy.