Transient Response Enhancement with Fast Transient Controller for Capacitor-Less LDO Regulator

Article Preview

Abstract:

This paper presents a capacitor-less CMOS low dropout regulator (LDO) with a push-pull class AB amplifier, and a fast transient controller to achieve a better transient response. The undershoot/overshoot voltage and the settling time are effectively reduced. Through the theoretical analysis of the circuit, cadence simulation with SMIC 0.18μm process and under the condition of the input voltage range 1.4~4 V shows the output voltage is 1.2 V, with the fast controller the total quiescent current is 8.2 μA, the undershoot /overshoot voltage is 97 mV/47 mV and the settling time is 0.3 μs as load current suddenly changes from 1 to 100 mA, or vice versa. Compared with this paper without fast transient controller, the undershoot voltage, the overshoot voltage and the settling time are enhanced by 30%, 64% and 80%, respectively.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

800-805

Citation:

Online since:

March 2014

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] R. J. Milliken, J. S. Martinez and E. S. Sinencio: IEEE Transactions on Circuits and systems-I, Vol. 54 (2007), pp.1879-1890.

Google Scholar

[2] Cheekala. Lovaraju and Ashis. Maity: A Capacitor-less Low Drop-out(LDO) Regulator with Improved Transient Response for System-on-Chip Applications (IEEE Xplore Digital Library, India 2013).

DOI: 10.1109/vlsid.2013.176

Google Scholar

[3] Y. -I. Kim and S. -S. Lee: Electronics Letters, Vol. 48 (2012), pp.175-177.

Google Scholar

[4] Alireza Saberkari and Rasoul Fathipour: Output-Capacitorless CMOS LDO Regulator Based on High Slew-Rate Current-Mode Transconductance Amplifier (IEEE Xplore Digital Library, China 2013).

DOI: 10.1109/iscas.2013.6572138

Google Scholar

[5] Tsz Yin Man, Philip K.T. Mok et al: IEEE Trans. Circuits Syst. II: Express Briefs, Vol. 54 (2007), pp.755-759.

Google Scholar

[6] Young-il Kim and Sang-sun Lee: IEEE Trans. Circuits Syst. II: Express Briefs , Vol. 60(2013), pp.755-759.

Google Scholar

[7] Antonio J. López-Martín and Sushmita Baswa: IEEE.J. Solid-State Circuits, Vol. 40(2005), pp.1068-1077.

Google Scholar

[8] Edward N. Y. Ho , Philip K. T. Mok et. al: IEEE Trans. Circuits Syst. II: Express Briefs, Vol. 57 (2010), pp.80-84.

Google Scholar

[9] Jianping Guo, Ka Nang Leung: IEEE.J. Solid-State Circuits, Vol. 45 (2010) , p.1896-(1905).

Google Scholar