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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 556-562Design and Analysis InGaAs Near-IR Nanowire...

Design and Analysis InGaAs Near-IR Nanowire Photodetector for High Speed Satellite Laser Communication Application

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Abstract:

InGaAs is direct and narrow bandgap material with ultrahigh electron mobility, and is a promising candidate for optoelectronic device in the near-infrared region. The main objective of this manuscript is to design an InGaAs semiconductor-based photodetectors nanowire infrared photodetector, which would be manipulated in optical response wavelength range at room temperature with high-detective and fast-responsive performances. Considering into account mature technology in laser device and for maximizing 1.55 um optical communication performance, the design of achieved bandwidth is >1 Gbps. According to the theoretical calculations, the fundamental parameters of the InGaAs core-shell nanowire APD photodetector device are obtained, with certain values of single nanowire diameter, lateral size and applied voltage, r=100 nm, l=1 μm, V_bias=10 V. Meanwhile, we deal with the electrons mobility of the internal nanowire based on three factors, size effect, temperature and electric field effect. The results demonstrate that the InGaAs nanowire APD is potential candidatefor high rate in satellite laser communication field.

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Periodical:

Applied Mechanics and Materials (Volumes 556-562)

Pages:

5163-5167

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.556-562.5163

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Online since:

May 2014

Authors:

Fa Jun Li*, Li Ying Tan, Yan Ping Zhou

Keywords:

Electron Mobility, Infrared Photodetectors, InGaAs Nanowire, Satellite Laser Communication

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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