Progress of ZnS and its Powder Morphology Synthesized by Chemical Route

Abstract:

As the most wide band gap in II-VI compound semiconducting materials, ZnS has many advantages of low-price, innocuity and excellent electro-optical, piezoelectric and pyroelectric properties. ZnS powder with wurtzite structure was synthesized by hydrothermal co-reduction from ZnCl₂ and Sulfur powder. The phase was characterized by X-ray diffraction (XRD), while the size and morphology of the product were characterized by field emission scanning electron microscope (FESEM). The results show that, the powders grow mainly along (0 1 8), (1 1 0), (1 1 24) crystal planes, and the ZnS powders were polygonal nanoflakes with sizes of about 100~300 nm in length or small particles less than 100 nm.

• Periodical: Applied Mechanics and Materials (Volumes 556-562)
• Pages: 567-570
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.556-562.567
• Online since: May 2014
• Authors: Wen Cheng Gao, Nian Jing Ji, Jing Li, Ke Gao Liu*
• Keywords: Hydrothermal Method, Morpholoy, Semiconductor, ZnS

References

[1] Liu E K, Zhu B S, Luo J S: Physics of Semiconductors (National Defence Industry Press, Beijing, 1994).

[2] Zhang R G, Zhuo W, Chen K L.: Chemical Industry Times, 27(4) (2013), p.32.

[3] Zhang R G, Zhuo W, Wang D G.: Electronic Components &Materials, 32(005)(2013), p.23.

[4] RATH A K, BHAUMIK S: Appl. Phys. Lett., 97(11) (2010), p.113502.

[5] Zhang X L: Doctor thesis of Wuhan University of Technology, (2010) p.3.

[6] Shin S W, Agawane G L, Gang M G: Journal of Alloys & Compounds, 526 (2012), p.25.

[7] Zhou L, Tang N, Wu S: Surface & Coatings Technology, 12(2012), p.10.

[8] Wan M, Zheng G, He K H: At. Mol. PhS. 26(1)(2009), p.15.

[9] Chen C P, Xie J X: Journal of Atomic & Molecular Physics, 30(001)(2013), p.149.

[10] Zhu H, Huang J F, Cao L Y: Journal of Synthetic Crystals, 1(2009), p.6.

[11] Liu D Z, Hou Z Q, Song J M: Journal of Materials Science & Engineering, 2011 (1), p.21.

[12] Li L H, Xie R S, Xiao D Q: Journal of Functional Materials, 43(1) (2012), p.59.

[13] Lang J H, Li X, Gao M: Jilin Normal University Journal (Natural Science Edition), 1(2010), p.27.

[14] Kou C L, Sun H, Cao J: Journal of Jilin Institute of Chemical Technology, 30(5) (2013), p.59.

[15] Yang N, Liu X F, Yu R H.: China Science Paper, 3(2013), p.247.

[16] Agawane G L, Shin S W, Moholkar A V: Journal of Alloys & Compounds, 535(2012), p.53.

[17] Dhanya A C, Murali K V, Preetha K C: Materials Science in Semiconductor Processing, p. (2013).

[18] Zhang R, Wang B, Wei L : Vacuum, 86(8) (2012), p.1210.

[19] Xie J, Li B, Li Y J : Chinese Journal of Physics. 59(8) (2010), p.5749.

[20] Lai S L, Cheng S Y, Huang H L: Electronic Components & Materials, 29(11) (2010), p.55.

[21] Quan N C, Gao F, Sun J: China Journal of Power Sources, 134(1) (2010), p.28.

[22] Huang J, Zhu H, Cao L Y: Journal of Synthetic Crystals, 37(4) (2008), p.862.

[23] Liu Y J, Huang J F, Wang X F: Journal of Synthetic Crystals. 39(1) (2010), p.69.

[24] Yuan H.: Doctor thesis of Jiangsu University of Science & Technology, (2012), p.8.

[25] Fang X S, Ye C H, Peng X S: Journal of crystal growth, 263(1) (2004), p.263.