GaN-Based Very Narrow Band-Pass p-i-n Ultraviolet A Photodetectors

Jun Wang; Feng Xie; Guo Sheng Wang; Jie Zhou; Wan Jun Wang; Heng Zhao; Guo Wei Cao; Nai Di Cui; Jin Guo

doi:10.4028/www.scientific.net/AMM.614.271

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 614GaN-Based Very Narrow Band-Pass p-i-n Ultraviolet...

GaN-Based Very Narrow Band-Pass p-i-n Ultraviolet A Photodetectors

Abstract:

The modeling of aluminum gallium nitride (AlGaN) p-i-n photodetectors response in the very narrow ultraviolet A (UV-A) range is reported in this paper. To obtain narrow-band response and high short wave rejection ratio, two AlGaN buffer layer with Al-content higher than that of the absorption region were designed between the substrate and un-doped AlGaN absorption layer to act under backside illumination as filter for short wavelength radiation. The band-pass of these a structure depends on the buffer layer Al-content. Electronic-band-structure calculations show that the blocking layer is the crucial parameter to achieve both a high short wave rejection ratio and a low dark current.

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Applied Mechanics and Materials (Volume 614)

Pages:

271-274

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.614.271

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Online since:

September 2014

Authors:

Jun Wang*, Feng Xie, Guo Sheng Wang, Jie Zhou, Wan Jun Wang, Heng Zhao, Guo Wei Cao, Nai Di Cui, Jin Guo

Keywords:

Band-Pass, Modeling, Photodetector, Ultraviolet

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DOI: 10.1063/1.1946201

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