A New Type of IGBT Device with Electronic Enhance Collector

Yu Shu Lai; Yan Xiong; Sheng Rong Zhong; Jian Xiong

doi:10.4028/www.scientific.net/AMM.644-650.3844

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 644-650A New Type of IGBT Device with Electronic Enhance...

A New Type of IGBT Device with Electronic Enhance Collector

Abstract:

A new type of substrate structure Electronic Enhance Collector IGBT (EEC-IGBT) was proposed, and the working principle was introduced in this paper. Compared with conventional IGBT, the substrate of EEC-IGBT was divided by the groove structure composed of oxide and aluminum. Finally, simulation analysis about the EEC-IGBT performance influence by structural parameters was given. The simulation results showed that the turn-off loss of EEC-IGBT was reduced 30% compared with CS-IGBT in the same condition voltage.

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Periodical:

Applied Mechanics and Materials (Volumes 644-650)

Pages:

3844-3849

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.644-650.3844

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Online since:

September 2014

Authors:

Yu Shu Lai*, Yan Xiong, Sheng Rong Zhong, Jian Xiong

Keywords:

EEC-IGBT, Electronic Enhance, Turn-Off Characteristic

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* - Corresponding Author

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