Impacts of H-Bridge DC Side Capacitor on Chain SVG Performance

Yun Shan Zhang; Jian Jun Chen; Cheng Ge Wei; Li Song; Bao Ming Hou; Shu Han Wang; Ji Hao Wang; Jia Yong Chen

doi:10.4028/www.scientific.net/AMM.644-650.3870

Paper Titles

Research on the Design of Drawer-Type Power Module Based 10kV Outdoor Intensive SVG
p.3854

Research on Field Parameter Setting Test for Using 10kV Chain SVG to Resolve Low Voltage of Rural Power Grid Substation
p.3858

Simulation Research on Starting Resistor Parameter Selection of 10kV Chain Static Var Generator
p.3861

Research on Chain SVG Direct Current Control Simulation Based on PSCAD
p.3866

Impacts of H-Bridge DC Side Capacitor on Chain SVG Performance
p.3870

Design of System to Prevent Drunken Driving Based on GPSGSM Technology
p.3873

The Analysis and Design of COS Interface Model
p.3877

Simulation on the Springback Property of Sealing Ring in Nuclear Power Plant
p.3881

Design of a Simulating Control System for Hybrid Wind/PV Power Generation
p.3886

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 644-650Impacts of H-Bridge DC Side Capacitor on Chain SVG...

Impacts of H-Bridge DC Side Capacitor on Chain SVG Performance

Abstract:

As the representative of 3G dynamic reactive compensation technology, the chain SVG voltage has advantages of high-grade and high compensation capacity which mainly owe to the structure that each phase of conversion chain consists of a plurality of H-bridges in cascade. Although the DC side capacitor is not the core device in H-bridge, it has the job of providing DC voltage source during H-bridge circuit conversion. DC side capacitance affect not only the operation reliability of chain SVG, but also equipment cost and operation loss, so it should be selected reasonably. This paper introduces the role DC side capacitor plays in H-BRIDGE. PSCAD is used for simulated contrast analysis of chain SVG with different capacitances, and raises the criteria for DC side capacitance selection. Finally, the correctness of the criteria is verified based on the actual operation data of the field equipment.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volumes 644-650)

Pages:

3870-3872

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.644-650.3870

Citation:

Cite this paper

Online since:

September 2014

Authors:

Yun Shan Zhang*, Jian Jun Chen, Cheng Ge Wei, Li Song, Bao Ming Hou, Shu Han Wang, Ji Hao Wang, Jia Yong Chen

Keywords:

Chain SVG, Dc Side Capacitor, H-Bridge, PSCAD

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] TAO Lixue, YAO Gang, ZHOU Lidan, etal. Design of±10kvar STATCOM based on IGBT[J]. Electric Power Automation Equipment 2006, 26(5): 61-64.

Google Scholar

[2] Masaho Furuya, Yasuo Ishiyama. Current Measurement Inside Press Pack IGBTs[J] Fuji Electric Journal 2002, 75(8) : 1-4.

Google Scholar

[3] Singh B,R. Saha, AI-Haddad K. Static synchronous compensators(STATCOM): a review[J]. IET Power Electron, 2009, 2(4): 297-324.

DOI: 10.1049/iet-pel.2008.0034

Google Scholar

[4] Withanage,R. and N. Shammas,. Series Connection of Insulated Gate Bipolar Transistors(Igbts)[J]. IEEE Transactions on PowerElectronics, 2012, 27(4): 2204-2212.

DOI: 10.1109/tpel.2011.2167000

Google Scholar