Electronic Structures and Magnetism of DO3-Type Heusler Alloys Rh3M (M=Al, Ga, In, Si)

L Zhang; M.X. Hao; Y.C. Gao; X. Gao

doi:10.4028/www.scientific.net/AMM.644-650.4880

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 644-650Electronic Structures and Magnetism of DO3-Type...

Electronic Structures and Magnetism of DO₃-Type Heusler Alloys Rh₃M (M=Al, Ga, In, Si)

Abstract:

We investigate the electronic structure and magnetism of DO3-type Heusler alloys Rh₃M (M = Al, Ga, In, Si) using the first-principle calculations. The Rh₃Si have been predicted to be half-metallic ferromagent at their equilibrium lattice constants. The effect of lattice parameters on the electronic structure and magnetic properties is also discussed in detail.

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Periodical:

Applied Mechanics and Materials (Volumes 644-650)

Pages:

4880-4883

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.644-650.4880

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Online since:

September 2014

Authors:

L Zhang*, M.X. Hao, Y.C. Gao, X. Gao

Keywords:

DO₃ Structure, Electronic Structure, Half-Metallicity, Heusler Alloy

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References

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