Effect of Structure and Thickness on the Electrical Characteristics of QLED Device

Hui Gao; Deng Hua Li; Hang Ma

doi:10.4028/www.scientific.net/AMM.705.214

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 705Effect of Structure and Thickness on the...

Effect of Structure and Thickness on the Electrical Characteristics of QLED Device

Abstract:

For the interface heterostructure between metal and organic layer of Quantum dot light-emitting diodes (QLED), tunneling injection model Fowler-Nordheim (F-N) was used to analyze the electrical characteristics of QLED. Through analyzing different thickness and the potential barrier of metal organic layer interface of QLED structure, simulation by Matlab obtained the J-V characteristic curves of the injection limit current density and the driving voltage. The simulation results showed that reducing the whole device thickness and the barrier height of metal organic layer interface of QLED structure, the energy consumption will be decreased. That is to say, carriers injection properties can be improved with the thinner device and lower barrier height, operating at the same voltage.

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Periodical:

Applied Mechanics and Materials (Volume 705)

Pages:

214-218

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.705.214

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Online since:

December 2014

Authors:

Hui Gao, Deng Hua Li, Hang Ma

Keywords:

Device Thickness, F-N Model, Injection Limit Current Density, Metal Organic Interface Barrier, QLED

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