Luminescence and Light Yield in Ce³⁺-Doped Y₁Gd₂Al_5-xGa_xO₁₂ (x=2,3,4) Single Crystal Scintillators

Abstract:

The compositional dependences of luminescence properties and light yield were studied in Ce³⁺ -doped Y₁Gd₂Al_5-xGa_xO₁₂ (x = 2, 3, 4) single crystal scintillators. The Gd³⁺→ Ce³⁺ energy transfer was evidenced by photoluminescence excitation spectra of Ce³⁺ emission. With increasing Ga content in the garnet host, the Ce³⁺ luminescence from the lowest 5d level (5d1) was blue-shifted due to the decrease in the crystal field splitting of the 5d levels. High light yield (LY) value of ~36,000 ph/MeV was obtained for a Y₁Gd₂Al₂Ga₃O₁₂:Ce sample under excitation with 662 keV γ-rays. The decrease of LY value was also observed with higher Ga content due to the thermal ionization from the 5d1 level to the conduction band.

• Periodical: Applied Mechanics and Materials (Volume 709)
• Pages: 390-393
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.709.390
• Online since: December 2014
• Authors: Warut Chewpraditkul*, Nakarin Pattanaboonmee, WEERAPONG CHEWPRADITKUL, Kei Kamada, Akira Yoshikawa, Martin Nikl
• Keywords: Light Yield, Luminescence, Scintillation, Y₁Gd₂Al_5-xGa_xO₁₂:Ce, Y₃Al₅O₁₂:Ce

References

[1] R. Autrata, P. Schauer, J. Kvapil, et al.: J. Phys. E, Sci. Instrum. 11(1978), p.707.

[2] M. Moszynski, T. Ludziewski, D. Wolski, et al.: Nucl. Instrum. Methods Phys. Res. A 345 (1994), p.461.

[3] A. Lempicki, M. H. Randles, D. Wisniewski, et al.: IEEE Trans. Nucl. Sci. 42(1995), p.280.

[4] M. Nikl, E. Mihokova, J. A. Mares, et al.: Phys. Status Solidi B 181 (2000), p. R10.

[5] H. Ogino, A. Yoshikawa, M. Nikl, et al.: Cryst. Growth 311 (2009), p.908.

[6] P. Dorenbos: IEEE Trans. Nucl. Sci. 57 (2010), p.1162.

[7] M. Nikl, A. Vedda, M. Fasoli, et al.: Phys. Rev. B 76 (2007), p.195121.

[8] W. Chewpraditkul, L. Swiderski, et al.: IEEE Trans. Nucl. Sci. 56 (2009), p.3800.

[9] J. A. Mares, A. Beitlerova, M. Nikl, et al.: Rad. Meas. 38 (2004), p.353.

[10] C. Dujardin, C. Mancini, D. Amans, et al.: J. Appl. Phys. 108 (2010), p.013510.

[11] M. Nikl, J. Pejchal, E. Mihokova, et al.: Appl. Phys. Lett. 88 (2006), p.141916.

[12] M. Fasoli, A. Vedda, M. Nikl, et al.: Phys. Rev. B 84 (2011), p.081102(R).

[13] E. van der Kolk, S. A. Basun, G. F. Imbush, et al.: Appl. Phys. Lett. 83 (2003), p.1740.

[14] N. J. Cherepy, J. D. Kuntz, Z. M. Seeley, et al.: Proc. SPIE 7805, No. 78050I (2010).

[15] K. Kamada, T. Endo, K. Tsutsumi, et al.: Cryst. Growth Des. 11 (2011), p.4484.

[16] K. Kamada, T. Yanagida, J. Pejchal, et al.: J. Phys. D: Appl. Phys. 44 (2011), p.505104.

[17] P. Dorenbos: J. Lumin. 134 (2013), p.310.

[18] J. M. Ogiegło, A. Katelnikovas, A. Zych, et al.: J. Phys. Chemistry A 117 (2013), p.2479.

[19] J. Ueda, K. Aishima, S. Tanabe: Optical Materials 35 (2013), p. (1952).

[20] Y. Wu and G. Ren: Optical Materials 35 (2013), p.2146.

[21] M. Nikl, A. Yoshikawa, K. Kamada, et al.: Progr. Cryst. Growth Charact. Materials 59 (2013), p.47.

[22] O. Sidletskiy, V. Kononets, K. Lebbou, et al.: Mat. Res. Bull. 47 (2012), p.3249.

[23] M. Moszynski, M. Kapusta, M. Mayhugh, et al.: IEEE Trans. Nucl. Sci. 44 (1997), p.1052.

[24] M. Bertolaccini, S. Cova and C. Bussolatti, in: Proceeding of Nuclear Electronics Symposium, Versailles, France (1968).

[25] M. Kucera, M. Nikl, M. Hanus, et al.: Phys. Status Solidi RRL 7 (2013), p.571.

[26] V. Babin, M. Nikl, K. Kamada, et al.: J. Phys. D: Applied Phys. 46 (2013), p.365303.

[27] Y. Pan, M. Wu and Q. Su: J. Phys. Chem. Solids 65 (2004), p.845.

[28] W. W. Holloway and M. J. Kestigian: Opt. Soc. Am. 59 (1969), p.60.

[29] J. M. Robertson, M. W. van Tol, W. H. Smits, et al.: Philips J. Res. 36 (1981), p.15.

[30] A. B. Muñoz-García and L. Seijo: Phys. Rev. B 82 (2010), p.184118.