[1]
Shinji Saito, Masaaki Onomura, Johji Nishio, et a1. Photoluminescence study of GaN/InGaN multiquantum well structures at room temperature [J]. J. Crystal Growth, 1998, 189/190: 128-132.
DOI: 10.1016/s0022-0248(98)00183-3
Google Scholar
[2]
Takeshi Yanagisawa, Takeshi Kojima. Degradation of InGaN blue light-emitting diodes under continuous and low-speed pulse operations[J]. Microelectronics Reliability, 2003, 43: 977–980.
DOI: 10.1016/s0026-2714(03)00093-3
Google Scholar
[3]
N. Narendran, Y. Gu, J. P. Freyssinier, et a1. Solid-state lighting: failure analysis of white LEDs [J]. Journal of Crystal Growth, 2004, 268: 449-456.
DOI: 10.1016/j.jcrysgro.2004.04.071
Google Scholar
[4]
Shei S. C, Sheu J. K,hen. C. F, et a1. Improved Reliability and ESD Characteristics of Flip-Chip GaN-Based LEDs With Internal Inverse-Parallel Protection Diodes [J]. Elsevier Science, 2007: 1-4.
DOI: 10.1109/led.2007.895428
Google Scholar
[5]
T. Doan,C. Chu, C. Chen, et a1. Vertical GaN based Light Emitting Diodes on Metal Alloy Substrate for Solid State Lighting Application[C]. Proc. SPIE, 2006, 6134: 61340G.
DOI: 10.1117/12.673987
Google Scholar
[6]
Chao-Chen Cheng, Chen-Fu Chu, Wen-Huan Liu, et a1. Highly efficient GaN vertical light emitting diode on metal alloy substrate from near UV to green color for solid state lighting application [C]. Proc. SPIE, 2006, 6337: 633703.
DOI: 10.1117/12.687636
Google Scholar
[7]
Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, et a1. High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application [J]. J. Cryst. Growth, 2007, 298: 722-724.
DOI: 10.1016/j.jcrysgro.2006.10.187
Google Scholar
[8]
Chao-Chen Cheng, Chen-Fu Chu, Wen-Huan Liu, et a1. Reliability of GaN-based vertical light-emitting diodes on metal alloy substrate for solid state lighting application [C]. Proc. SPIE, 2006, 6337: 633705.
DOI: 10.1109/jproc.2009.2037026
Google Scholar