Research of Soldering Silicon Substrate with Solder Type Sn-Ag-Ti

Roman Koleňák; Michal Prach

doi:10.4028/www.scientific.net/AMM.729.32

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 729Research of Soldering Silicon Substrate with...

Research of Soldering Silicon Substrate with Solder Type Sn-Ag-Ti

Abstract:

The work deals with soldering of silicon substrate with active solders designated S-Bond 220-1, 220-50 and 220-M. Soldering was performed with power ultrasound in the air without flux application at temperature 250 to 280 °C. The results of EDX analysis have shown that active elements as Ti, Ce and Mg support wetting of Si substrate and thus assure the joint formation. Strength of joints was studied by shear test. The highest strength was achieved with S-Bond 220-1 solder. The strength of joints fabricated with S-bond solders on Si substrate varied from 23 to 38 MPa.

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Periodical:

Applied Mechanics and Materials (Volume 729)

Pages:

32-38

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.729.32

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Online since:

January 2015

Authors:

Roman Koleňák*, Michal Prach

Keywords:

Active Solder, Shear Strength, Ultrasonic Soldering

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