The Electrical Properties of the Probe under Different Loading Frequencies

Abstract:

A testing circuit of probe is designed to research the electrical properties of the probe under different loading frequencies. Sinusoidal signals of different frequencies are produced by Tektronix AFG3102 signal generator, and DSOX2022A Oscilloscope is used to measure the probe voltage,constant resistance voltage and the source voltage, so the phase between the probe voltage and constant resistance voltage can be calculated. Assumed the constant resistance is a pure resistance. Since the circuit is connected in series, so the phase between the probe voltage and the probe current can be calculated. The result reveals that the probe shows resistive when the phase between the probe voltage and the probe current is 0 ° within 200 KHz frequency. Beyond 200 KHz the phase between the probe voltage and the probe current increases to 60 ° and then declines to a steady value 40°, which shows that the probe is inductive.

• Periodical: Applied Mechanics and Materials (Volume 742)
• Pages: 163-167
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.742.163
• Online since: March 2015
• Authors: Qing Yuan, Lei Han*, Chun Liang Liu
• Keywords: Frequency, Oscilloscope, Phase, Probe

References

[1] J. Li, L. Han, J. Duan, J. Zhong, Interface Mechanism of Ultrasonic Flip Chip Bonding, Applied Physics Letters, Vol. 90, 2007: 242902.

DOI: 10.1063/1.2747673

[2] Junhui Li, Liu Linggang, Deng Luhua, Ma Bangke, Wang Fuliang, Lei Han, Interfacial microstructures and thermodynamics of thermosonic Cu-wire bonding, IEEE Electron Device Letters, Vol. 32, No. 10, pp.1433-1435, (2011).

DOI: 10.1109/led.2011.2161749

[3] Chuan-Yu Chang, Chun-His Li, Yung-Chi Chang et al. Wafer defect inspection by neural analysis of region features [J]. Journal of Intelligent Manufacturing, 2011, 22(6): 953-964.

DOI: 10.1007/s10845-009-0369-4

[4] K. -O. LEE. Thermomechanical Reliability Study of Benzocyclobutene Film in Wafer-Level Chip-Size Package [J]. Journal of Electronic Materials, 2012, 41(4): 706-711.

DOI: 10.1007/s11664-012-1944-6

[5] Temponi, C. , Jimenez, J. A., Mediavilla, F. A. M. et al. Critical Variables in the Decision-Making Process for AMHS Technology Selection in Semiconductor Wafer Size Transitions: Exploratory Study[J]. IEEE Transactions on Semiconductor Manufacturing, 2012, 25(3): 408-419.

DOI: 10.1109/tsm.2012.2193424

[6] Junhui Li, Wang Fuliang, Lei Han and Jue Zhong, Theoretical and Experimental Analyses of Atom Diffusion Characteristics on Wire Bonding Interfaces, Journal of Physics D-applied physics, 2008, 41: 135303.

DOI: 10.1088/0022-3727/41/13/135303

[7] Y.H. Wafer probe test at high temperature [J]. 2014(3): 282-283.

[8] J. Li, D. Ge, H. He, and L. Han, Dynamic and Electrical Characteristics of Microprobe Testing in Microelectronics Packaging, IEEE Transactions on Components, Packaging and Manufacturing Technology, 4(2): 216-222, (2014).

DOI: 10.1109/tcpmt.2013.2295855