Effects of Annealing Temperature on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

Hua Wang; Zhi Da Li; Ji Wen Xu; Yu Pei Zhang; Ling Yang

doi:10.4028/www.scientific.net/AMM.778.88

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 778Effects of Annealing Temperature on Resistance...

Effects of Annealing Temperature on Resistance Switching Properties of ZnMn₂O₄ Films Deposited by Magnetron Sputtering

Abstract:

ZnMn₂O₄ films were fabricated on p-Si substrate by magnetron sputtering. The effects of annealing temperature on microstructure, resistance switching properties and endurance characteristics of ZnMn₂O₄ films were investigated. The ZnMn₂O₄ films with a structure of Ag/ZnMn₂O₄/p-Si exhibit bipolar resistive switching behavior. The results indicated that the annealing temperature has not changed its spinel structure, the bipolar resistance behavior and endurance characteristics, but the grain become more and more large, arranged closed and distributed evenly with the increase of annealing temperature from 450°C to 750°C. The ZnMn₂O₄ films annealed at 600°C have the biggest R_HRS/R_LRS ratio, the lowest V_ON and V_OFF. The R_HRS/R_LRS ratios of all specimens maintain at about 10³ after successive 1000 switching cycles, which indicated that the Ag/ZnMn₂O₄/p-Si device has better endurance characteristics.

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Applied Mechanics and Materials (Volume 778)

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88-91

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https://doi.org/10.4028/www.scientific.net/AMM.778.88

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July 2015

Authors:

Hua Wang*, Zhi Da Li, Ji Wen Xu, Yu Pei Zhang, Ling Yang

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Annealing Temperature, Magnetron Sputtering, Resistance Switching Properties, ZnMn₂O₄

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