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The VO Defect in Electron Irradiated Czochralski Silicon

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Abstract:

The Czochralski silicon (CZ-Si) samples were irradiated with 1.5 MeV electrons and annealed at 200 - 450 °C. It was investigated the effect of irradiation dose and interstitial oxygen content [Oi] on VO concentration by Fourier transform infrared spectroscopy (FTIR). The results show that VO concentration increases with irradiation dose but not linear increase. The interstitial oxygen content has no effect on VO concentration. The VO intensity increases firstly and then decreases after annealing in samples with low oxygen content. The VO disappears at 450 °C. In high oxygen content samples, VO exhibits thermal stability and disappears at 400 °C.

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Periodical:

Advanced Materials Research (Volumes 1004-1005)

Pages:

293-296

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1004-1005.293

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Online since:

August 2014

Authors:

Li Li Cai*, Hui Bin Wang, Cui Ju Feng, Gui Feng Chen

Keywords:

Defect, Electron-Irradiation, Silicon, Vacancy Oxygen (VO)

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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