Influence of Power on the Microstructure and Optical Properties of Microcrystalline Si Films

Hua Cheng; Feng Jiang; Chang Zheng Ma; Kuo Jiang

doi:10.4028/www.scientific.net/AMR.1016.305

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1016Influence of Power on the Microstructure and...

Influence of Power on the Microstructure and Optical Properties of Microcrystalline Si Films

Abstract:

Microcrystalline silicon films were deposited using Ar diluted SiH₄ gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of power on microstrcture and optical properties of microcrystalline silicon films were investigated. The results show that, with the increasing of the power, the crystallinity increased, but the concentration of hydrogen decreased monotonously. Furthermore, the absorption coefficient of the films increased monotonously, and the optical bandgap changed from 1.89eV to 1.75eV with the microwave power ranging from 400 W to 650W.

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Periodical:

Advanced Materials Research (Volume 1016)

Pages:

305-308

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1016.305

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Online since:

August 2014

Authors:

Hua Cheng*, Feng Jiang, Chang Zheng Ma, Kuo Jiang

Keywords:

Absorption Coefficient, Microcrystalline Silicon Film, Microwave Power, Optical Bandgap

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