Electrostatic Sensitivity Test of Semiconductor Device

Shi Liang Yang; Teng Li; Wei Hong Tang; Ling Dai

doi:10.4028/www.scientific.net/AMR.1030-1032.1172

Paper Titles

Analysis of Energy Transfer and Distribution Characteristics of the Gearbox Vibration Transmission Channel Based on Energy Finite Element
p.1151

Analysis of Horizontal Air-Separator Field of Municipal Solid Waste Based on CFD
p.1155

Computational Analysis of Flow Dynamics in a Four-Stroke Internal Combustion Engine
p.1163

Effect of Four Point Contact Slewing Bearing Groove Curvature Parameters on the Stress State
p.1167

Electrostatic Sensitivity Test of Semiconductor Device
p.1172

Exhaust Emissions from a Light-Duty Diesel Engine with SME-Diesel Fuel
p.1176

Experimental Study of Landing Gear Simulation Test-Bed
p.1181

Fault Diagnosis for the Oil System of Aviation Piston Engine Based on BP Neural Network
p.1185

Finite Element Analysis on Tapered Roller with Logarithmic Profile
p.1189

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 1030-1032Electrostatic Sensitivity Test of Semiconductor...

Electrostatic Sensitivity Test of Semiconductor Device

Abstract:

The electrostatic sensitivity of triode 2SC3358 has been tested by completely step method. By using strict calculation, we have found the damage threshold voltage distribution of CB junction of the semiconductor device observe normal distribution, the confidence interval about average value of the damage voltage under a confidence level at 90% is (1095.6V, 1256.8V) and the standard deviation is 235.7V. The analysis of the distribution of damage probability about electrostatic sensitive device has important significance for improving the reliability of electrostatic sensitive system.

You might also be interested in these eBooks

Materials, Transportation and Environmental Engineering II

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 1030-1032)

Pages:

1172-1175

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1030-1032.1172

Citation:

Cite this paper

Online since:

September 2014

Authors:

Shi Liang Yang*, Teng Li, Wei Hong Tang, Ling Dai

Keywords:

Completely Step Method, Electrostatic Sensitivity, Semiconductor Devices

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] GJB/Z 377A-94, Sensitivity test using the method of mathematical statistics [S].

Google Scholar

[2] GB 4086. 2-83, Numerical tables about statistical distribution of c2 [S].

Google Scholar

[3] Yang Shiliang. Experimental research about electromagnetic pulse effects of the semiconductor devices [D]. Shijiazhuang: Master's degree thesis of Ordnance Engineering College, (2005).

Google Scholar