Experiment and Thermodynamic Analysis of Silica Forming in CoCrPt-SiO₂ Target by Synthetic Reaction

Abstract:

In order to solve the problems of feasibility and conditions for synthetic reaction of SiO₂ in sputtering target of CoCrPt-SiO₂.The Co₃O₄ powder and Si powder were used in synthetic reaction experiments. It was found for experimental results that reaction product including SiO₂, Co₂SiO₄, Co₂Si and CoSi₂ at 1100°C, and keep the same with thermodynamics result. The reaction products under different temperature were listed in detail by thermodynamic calculation. It was showed in calculation results that the higher temperature the more reaction products. When reaction temperature below 828.07°C, the SiO₂ is only reaction product. So the method of synthetic reaction of SiO₂ in sputtering target of CoCrPt-SiO₂ is feasible, and reaction temperature must not higher than that characteristic temperature.

• Periodical: Advanced Materials Research (Volumes 1030-1032)
• Pages: 73-77
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1030-1032.73
• Online since: September 2014
• Authors: Song Chen, Jian Sheng Lu*, Ming Xie, Ming Wen
• Keywords: CoCrPt, Synthetic Reaction, Target, Thermodynamic

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