Electrophysical Characteristics of Metal-Insulator-Semiconductor Structures Comprising CdHgTe-Based Quantum Wells

A.V. Voitsekhovskii; D.I. Gorn

doi:10.4028/www.scientific.net/AMR.1040.34

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1040Electrophysical Characteristics of...

Electrophysical Characteristics of Metal-Insulator-Semiconductor Structures Comprising CdHgTe-Based Quantum Wells

Abstract:

Description of theoretical model for energy-band spectrum calculation for the heteroepitaxial CdHgTe (MCT) structures grown by molecular-beam epitaxy (MBE) method with the single quantum wells (QW) is presented in this work. This computation model allows to calculate different electro-physical properties of this structures and allows to explain features of their C-V and G-V characteristics in the wide temperature range, i.e. from “helium” till room temperatures. This scientific work was carried out in the network of Tomsk State University Competitiveness Improvement Program.

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Periodical:

Advanced Materials Research (Volume 1040)

Pages:

34-38

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1040.34

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Online since:

September 2014

Authors:

A.V. Voitsekhovskii*, D.I. Gorn

Keywords:

Cd_xHg_1-xTe Grown by MBE, C-V Characteristic, Energy-Band Diagram, G-V Characteristic, Metal-Insulator-Semiconductor (MIS) Structure, Quantum Well

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