Zinc sulphide (ZnS) thin films were deposited on the indium tin oxide (ITO) substrates by a novel, simple cathodic electrodeposition method under atmospheric pressure. These thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence spectrum (PL) at room temperature. The effects of deposition voltage on the phase composition, morphology and photoluminescence behavior of the thin films were investigated. XRD analysis shows that the deposited thin films is highly preferential growth along (200) orientation. Both AFM and XRD analyses indicate that the surface of the ZnS thin films is composed of uniform grains of around 50 nm in diameter. With the increase in the deposition voltages, the crystallization of the obtained thin films improves and the grain size of the ZnS thin films increases. Photoluminescence emission peaks are observed at at 475~490 nm and 500 ~530 nm at room temperature for an excitation of 210 nm.