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Technology for Silicon NTD Using Pool-Type Research Reactors
Abstract:
Neutron transmutation doped silicon is an important material for electronics that is based on the conversion of 30Si into 31P through a 30Si (n,γ) → 31Si reaction taking place during the neutron irradiation and followed by the beta decay of 31Si into 31P. The production of such silicon requires high homogeneity. The paper describes a new facility for NTD of silicon ingots of up to 5 inches in diameter and presents the experimental results that were obtained at IRT-T research nuclear reactor.
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333-337
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January 2015
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© 2015 Trans Tech Publications Ltd. All Rights Reserved
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