Investigation of Surface Phase Layers on GaAs after Selective Chemical Etching

Oksana N. Zarubina; Gennady M. Mokrousov; Alexander G. Touryanski; Igor V. Pirshin; Liubov V. Maliy

doi:10.4028/www.scientific.net/AMR.1085.91

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1085Investigation of Surface Phase Layers on GaAs...

Investigation of Surface Phase Layers on GaAs after Selective Chemical Etching

Abstract:

Normal 0 false false false RU X-NONE X-NONE The combination of methods of voltammetry, Raman spectroscopy, and X-ray reflectometry for the first time has been applied for the more comprehensive investigation of interfacial boundaries of GaAs, i.e. determination of phase distribution and thickness of the phase layers. The conditions for the formation of elemental arsenic on a GaAs surface in the process of selective dissolution are discussed. The stability of interfacial boundaries in air has also been studied. The investigations have shown that air storage lead to the oxidation of formed As⁰ and reorganization of GaAs interfacial boundary accompanied by the formation of Ga₂O₃ and As⁰ as a result of a reaction between As₂O₃ and GaAs. The results on interfacial boundaries composition were found to be correlated with the theoretical data. /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Обычная таблица"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0cm 5.4pt 0cm 5.4pt; mso-para-margin-top:0cm; mso-para-margin-right:0cm; mso-para-margin-bottom:10.0pt; mso-para-margin-left:0cm; line-height:115%; mso-pagination:widow-orphan; font-size:11.0pt; font-family:"Calibri","sans-serif"; mso-ascii-font-family:Calibri; mso-ascii-theme-font:minor-latin; mso-hansi-font-family:Calibri; mso-hansi-theme-font:minor-latin; mso-bidi-font-family:"Times New Roman"; mso-bidi-theme-font:minor-bidi; mso-fareast-language:EN-US;}

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Advanced Materials Research (Volume 1085)

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91-94

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1085.91

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Online since:

February 2015

Authors:

Oksana N. Zarubina*, Gennady M. Mokrousov, Alexander G. Touryanski, Igor V. Pirshin, Liubov V. Maliy

Keywords:

Chemical Etching, Gallium Arsenide, Interfacial Transformations, Surface Phase Layer, X-Ray Reflectometry

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