Enhanced Absorption of Single Silicon Nanowire with Si3N4 Shell for Photovoltaic Applications

Wen Fu Liu; Hua Li Hao

doi:10.4028/www.scientific.net/AMR.1090.173

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1090Enhanced Absorption of Single Silicon Nanowire...

Enhanced Absorption of Single Silicon Nanowire with Si₃N₄ Shell for Photovoltaic Applications

Abstract:

Based on the Lorenz-Mie light scattering theory, we have calculated the light absorption of single silicon nanowire with Si₃N₄ coating, and compared with pure single silicon nanowire. The calculated result indicates that there exists an enhanced absorption in the Si₃N₄-coated silicon nanowire and shows a great photocurrent enhancement factor (~70%) for the coaxial NW with the shell thickness of ~70 nm. For a special shell thickness (175 nm) in the Si₃N₄-coated silicon nanowire for r = 150 nm, the enhancement comes up to ~98.45%.

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Periodical:

Advanced Materials Research (Volume 1090)

Pages:

173-177

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1090.173

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Online since:

February 2015

Authors:

Wen Fu Liu*, Hua Li Hao

Keywords:

Coaxial Nanowires, Light Absorption, Lorenz-Mie Light Scattering Theory, Solar Cells

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