Electrical Properties of Undoped Zinc Oxide Nanostructures at Different Annealing Temperature

Abstract:

This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 oC, 450 oC, 500 oC, and 550 oC.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 oC which its resistivity is 5.36 × 10⁴ Ωcm^-1. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (>800nm) range but exhibit high absorption in the UV range.

• Periodical: Advanced Materials Research (Volume 1109)
• Pages: 572-576
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1109.572
• Online since: June 2015
• Authors: M.F. Nasir*, Mohd Hannas, Mohamad Hafiz Mamat, Mohamad Rusop
• Keywords: Doping Concentrations, Electrical Properties, Optical Properties, Sol-Gel Spin Coating Method, Structural Properties, Undoped ZnO

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