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Verification of Theoretical Model for Tunneling Currents in Al/SiO2/p-Si MOS Capacitors with Nanometer-Thick Oxides

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Abstract:

The verification of calculation results of the isotropic and anisotropic-isotropic mass models in Al/SiO2/Si MOS capacitor against the experimental data is presented, using electron transversal velocity as a fitting parameter. In the accumulation condition, the comparison yields the electron velocity of 2.8 x 106 m/s for both isotropic and isotropic-anisotropic mass models. The tunneling current values for both models are slighly different with experimental data. In the inversion condition, the values of electron velocity for isotropic and isotropic-anisotropic model are 1.55 x 106 m/s and 1 x 105 m/s, respectively. The calculation results of isotropic-anisotropic mass model appear to be closer to the experimental data compared to those of isotropic mass model, due to the effect of electron effective mass.

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Periodical:

Advanced Materials Research (Volume 1112)

Pages:

37-40

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1112.37

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Online since:

July 2015

Authors:

Budi Mulyanti*, Lilik Hasanah, Arjuni B. Pantjawati, Hideki Murakami, Khairurrijal Khairurrijal

Keywords:

Al/SiO2/p-Si MOS Capasitor, Electron Velocity, Isotropic Mass, Isotropic-Anisotropic Mass, Tunneling Current

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] L. Mao, The effects of the injection-channel velocity on the gate leakage current of nanoscale MOSFETs, IEEE Electron Devices Letter. 28 (2007) 161.

DOI: 10.1109/led.2006.889214

Google Scholar

[2] L. Hasanah, M. Abdullah and Sukirno, et al., Model of a tunneling current in an anisotropic Si/Si1−xGex/Si heterostructure with a nanometer-thick barrier including the effect of parallel–perpendicular kinetic energy coupling. Semicond. Sci. Technol., 23 (2008).

DOI: 10.1088/0268-1242/23/12/125024

Google Scholar

[3] R. Yang, J. Luo and J. Tu, et al., Study of uniform and graded SiGe chanel heterojunction. Microelectr. J, 35 (2004) 145.

Google Scholar

[4] A. Rahman, M.S. Lundstrom, and A.W. Ghosh, Generalized effective mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers. J. Appl. Phys. 97 (2005) 053702.

DOI: 10.1063/1.1845586

Google Scholar

[5] R. Clerc, B. De Salvo and G. Ghibaudo, et al., Electrical characterization and modeling of MOS structures with ultra-thin oxide. Solid-State Electronics. 46 (2002) 407.

DOI: 10.1016/s0038-1101(01)00113-7

Google Scholar

[6] U.K. Mishra and J. Singh, Semiconductor Devices Physics and Design. Dordrecht: Springer, (2008).

Google Scholar

[7] B. Mulyanti, L. Hasanah, A.B. Pantjawati, et al., Modeling on Tunneling Currents on Al/SiO2/p-Si-MOS Capacitors with Nanometer-Thick Oxides, Proceeding of 2013 3rd International Conference on Instrumentation, Communications, Information Technology, and Biomedical Engineering (ICCI-BME), Bandung 7-8 November (2013).

DOI: 10.1109/icici-bme.2013.6698505

Google Scholar

[8] M. Sze and K. Ng, Physics of Semiconductor Devices, New York: John Wiley and Sons, (2007).

Google Scholar