Seebeck Coefficient of Ge-on-Insulator Layers Fabricated by Direct Wafer Bonding Process

Veerappan Manimuthu; Shoma Yoshida; Yuhei Suzuki; Faiz Salleh; Mukannan Arivanandhan; Yoshinari Kamakura; Yasuhiro Hayakawa; Hiroya Ikeda

doi:10.4028/www.scientific.net/AMR.1117.94

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1117Seebeck Coefficient of Ge-on-Insulator Layers...

Seebeck Coefficient of Ge-on-Insulator Layers Fabricated by Direct Wafer Bonding Process

Abstract:

We investigate thermoelectric characteristics of SiGe nanostructures for realizing high-sensitive infrared photodetector applications. In this paper, for future Ge and SiGe nanowires, we fabricate p-type Ge-on-insulator (GOI) substrates by a direct wafer bonding process. We discuss the annealing effect on the GOI substrate in the process and measure its Seebeck coefficient in the temperature range of 290-350 K. The Seebeck coefficient of the GOI layers is almost identical with the reported values for Ge. This result confirms that the measured Seebeck coefficient of GOI layers is not influenced by the buried oxide (BOX) layer and the Si substrate.

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Periodical:

Advanced Materials Research (Volume 1117)

Pages:

94-97

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1117.94

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Online since:

July 2015

Authors:

Veerappan Manimuthu*, Shoma Yoshida, Yuhei Suzuki, Faiz Salleh, Mukannan Arivanandhan, Yoshinari Kamakura, Yasuhiro Hayakawa, Hiroya Ikeda

Keywords:

Ge on Insulator, Seebeck Coefficient, Si on Insulator, Thermoelectrics, Wafer-Bonding Process

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