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Effect of Varying Doping Level on Structural, Electrical and Optical Properties of Al Doped ZnO Spin Coated Films

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Abstract:

The synthesis and characterization of spin-coated Al-doped ZnO (AZO) thin films with varying Al concentrations (0%, 5%, 10%, 15% and 20%) onto glass substrates have been demonstrated in this paper. The structural, electrical and optical properties of the spin-coated thin films have been investigated by Scanning Electron Microscopy (SEM), Energy Dispersive X-Ray (EDX) analysis, Van Der Pauw method and UV-visible spectroscopy. The EDX study shows well-defined peaks which confirm the presence of only Zn, O and Al and no other impurities in the films. The increase of Al and decrease of Zn weight percentages with increasing doping level confirms the effective substitution of Zn by Al. SEM of the surfaces of the films shows that undoped ZnO films contain particle agglomeration which is reduced with Al doping and the surfaces of the films gradually became more uniform. The thickness of the AZO films varied from 86 to 699 nm with increasing Al doping concentration. The electrical conductivity of the films increased up to ~ 7 × 10-2 (Ω.cm)-1 due to doping with 5% Al concentration. The optical transmittance highly increased above 95% in the visible range with the introduction of Al dopant and it kept rising with the increase of Al concentration. The optical energy band gap of undoped ZnO increased from 3.275eV to 3.342 eV with 5% Al doping.

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Advanced Materials Research Vol. 1171 View Preview

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Advanced Materials Research (Volume 1171)

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1-10

DOI:

https://doi.org/10.4028/p-sj9g3k

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May 2022

Authors:

Sangita Rani Basu, Sinthia Shabnam Mou*

Keywords:

Al Doped ZnO, Al: ZnO, AZO, Photonics, Photovoltaic, Solar Cell, Sol-Gel, Spin Coating, TCO, Transparent Conductor

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