Effect of Anneal Time on Photoelectric Properties of SnS:Ag Thin Films

Hong Jie Jia; Shu Ying Cheng; Pei Min Lu

doi:10.4028/www.scientific.net/AMR.152-153.752

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 152-153Effect of Anneal Time on Photoelectric Properties...

Effect of Anneal Time on Photoelectric Properties of SnS:Ag Thin Films

Abstract:

SnS and Ag films were deposited on glass substrates by vacuum thermal evaporation successively, and then the thin films were annealed at 260°C in N2 for different times (60min, 120min, 180min) in order to investigate the influence of annealing time on the silver-doped SnS (SnS:Ag) films. The obtained films annealed at different times are polycrystalline SnS with orthogonal structure, and the crystallites in the films are exclusively oriented along the {111} direction. With the increase of annealing time, the uniformity and crystallization of the films are improved, the carrier concentration and mobility of the films first rise and then drop, whereas their resistivity and direct bandgap energy Eg show the contrary trend.

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Periodical:

Advanced Materials Research (Volumes 152-153)

Pages:

752-755

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.152-153.752

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Online since:

October 2010

Authors:

Hong Jie Jia, Shu Ying Cheng, Pei Min Lu

Keywords:

Annealing, Photoelectric Property, SnS:Ag Film, Thermal Evaporation

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