Microstructure and Electrical Properties of Nd₂O₃-Doped TiO₂-Ta₂O₅-Based Capacitor-Varistor Ceramics

Abstract:

A low-voltage TiO2 capacitor-varistor ceramics doped with Ta2O5 and Nd2O3 was systematically researched. The effect of Nd2O3 on the microstructure, nonlinear electrical properties, and dielectric properties of TiO2-based ceramics was investigated. It was found that an optimal doping composition of 99.20 mol% TiO2-0.10 mol%Ta2O5-0.7 mol% Nd2O3 was obtained with low breakdown voltage of 8.5 v/mm, high nonlinear constant of 4.0, ultrahigh electrical permittivity of 1.07× 105 and low tanδ of 0.39. In view of these electrical characteristics, the ceramics of 99.20 mol% TiO2-0.10 mol%Ta2O5-0.7 mol% Nd2O3 is a viable candidate for capacitor-varistor functional devices. The theory of defects in the crystal lattice was introduced to explain the nonlinear electrical behavior of the Nd2O3-doped TiO2-based varistor ceramics.

• Periodical: Advanced Materials Research (Volumes 160-162)
• Pages: 348-352
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.160-162.348
• Online since: November 2010
• Authors: Tian Guo Wang, Qun Qin, Dong Jian Zhou
• Keywords: Electrical Properties, Microstructure, Titanium Oxide, Varistor

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