A Novel Characteristic Method on Fatigue Crack Growth of N80 Casing Drilling Steel

Article Preview

Abstract:

Electrical parameters and low-frequency noise test were measured for N80 steel casing drilling, through extracting low-frequency parameters and combining with conventional fatigue crack growth characterization methods and analyzing their morphology. After fatigue crack growth, the results showed that: (1) Electrical parameters of N80 increase, and power spectral density of 1/f noise increases two orders of magnitude. (2) Values of γ and B are significantly increased, indicating that the process of fatigue produced more cracks, defects, and combination centers, from the mechanism of fatigue crack growth of N80, defects and cracks resulting from fatigue are the numbers of kind of fluctuations. In essence, low-frequency noise is a type of fluctuations, which show that low-frequency noise as the characterization of non-destructive., which can serve as a viable tool to study the defects and the characterization of defects.

You might also be interested in these eBooks

Info:

Periodical:

Advanced Materials Research (Volumes 194-196)

Pages:

224-227

Citation:

Online since:

February 2011

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2011 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] Tommy W, Bruce H, Garrett: SPE Drilling and Completion, Vol. 20(2005), p.17.

Google Scholar

[2] Ch. Y. Chen: Fatigue and fracture, 2005. 3.

Google Scholar

[3] Shepard. S F, R. R H, Warren T M: Proceedings of the drilling Conference. Vol. 1(2001), p.298.

Google Scholar

[4] T. Sh.: Materials physical properties. 2006. 1.

Google Scholar

[5] YiQi Zh., Qing Sun: Low-frequency Noise in semiconductor devices. (1993).

Google Scholar

[6] A.K. Raychaudhuri: Current opinion in solid state and materials science. Vol. 6(2002). p.67.

Google Scholar

[7] L.K.J. Vandamme and Gy. Trefan: IEE Proc-Circuit Devices Syst. Vol. 149. (2002).

Google Scholar

[8] Munecazu Tacano: IEEE transactions on electron devices, Vol. 40(1993) No. 11.

Google Scholar

[9] JinZhan Gao: Weak signal detection. 2004. 11.

Google Scholar

[10] XiaoKuo Yang, ShuZhao Wang, GuiBin Jin: Electrical Measurement & Instrumentation. Vol. 45, No. 505, 2008. 01.

Google Scholar

[11] J.B. Gao, Yinhe Cao, Jae-Min Lee: Physics Letters A 314(2003)392-400.

Google Scholar

[12] Hei Wong: Microelectronics Reliability 43(2003) 585-599.

Google Scholar