Influence of Substrate Material on Tensile Behavior and Fracture Characteristics of SiC by Chemical Vapour Deposition

Cui Xia Liu; Yan Qing Yang; Xian Luo

doi:10.4028/www.scientific.net/AMR.213.272

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 213Influence of Substrate Material on Tensile...

Influence of Substrate Material on Tensile Behavior and Fracture Characteristics of SiC by Chemical Vapour Deposition

Abstract:

SiC filament was prepared by Chemical Vapour Deposition method using W wire as the substance material. The combination between W wire and SiC became a key element influencing tensile strength of SiC. In this paper, tensile fracture morphology of SiC filament was analyzed, from which interface combination between SiC and W wire was discussed under different deposition temperature and the influence of interface layer’s thickness on final tensile of SiC filament was given. How to control the thickness of interface layer is a key factor for improving performance of SiC filament.

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Periodical:

Advanced Materials Research (Volume 213)

Pages:

272-275

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.213.272

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Online since:

February 2011

Authors:

Cui Xia Liu, Yan Qing Yang, Xian Luo

Keywords:

CVD, Fracture Characteristic, Interface, SiC Filament, W Wire

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