Comparative Study of Low Dielectric Constant Material Deposited Using Different Precursors
Two kinds of organosilicate precursors, trimethylsilane (3MS) and diethoxymethylsilane (DEMS), were used to produce low-k films by plasma-enhanced chemical vapor deposition (PECVD) in this work. The experimental results indicate that DEMS-based low-k films have superior electrical performance and better thermal stability as compared to 3MS-based low-k films. Therefore, DEMS-based films are the promising low-k materials which can be integrated in very large scale integration circuit as an inter-layer dielectric material.
Zhong Cao, Lixian Sun, Xueqiang Cao, Yinghe He
Y. L. Cheng et al., "Comparative Study of Low Dielectric Constant Material Deposited Using Different Precursors", Advanced Materials Research, Vols. 233-235, pp. 2480-2485, 2011