Comparative Study of Low Dielectric Constant Material Deposited Using Different Precursors

Abstract:

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Two kinds of organosilicate precursors, trimethylsilane (3MS) and diethoxymethylsilane (DEMS), were used to produce low-k films by plasma-enhanced chemical vapor deposition (PECVD) in this work. The experimental results indicate that DEMS-based low-k films have superior electrical performance and better thermal stability as compared to 3MS-based low-k films. Therefore, DEMS-based films are the promising low-k materials which can be integrated in very large scale integration circuit as an inter-layer dielectric material.

Info:

Periodical:

Advanced Materials Research (Volumes 233-235)

Edited by:

Zhong Cao, Lixian Sun, Xueqiang Cao, Yinghe He

Pages:

2480-2485

DOI:

10.4028/www.scientific.net/AMR.233-235.2480

Citation:

Y. L. Cheng et al., "Comparative Study of Low Dielectric Constant Material Deposited Using Different Precursors", Advanced Materials Research, Vols. 233-235, pp. 2480-2485, 2011

Online since:

May 2011

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Price:

$35.00

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