Comparative Study of Low Dielectric Constant Material Deposited Using Different Precursors

Yi Lung Cheng; Yi Shiung Lu; Tai Jung Chiu

doi:10.4028/www.scientific.net/AMR.233-235.2480

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 233-235Comparative Study of Low Dielectric Constant...

Comparative Study of Low Dielectric Constant Material Deposited Using Different Precursors

Abstract:

Two kinds of organosilicate precursors, trimethylsilane (3MS) and diethoxymethylsilane (DEMS), were used to produce low-k films by plasma-enhanced chemical vapor deposition (PECVD) in this work. The experimental results indicate that DEMS-based low-k films have superior electrical performance and better thermal stability as compared to 3MS-based low-k films. Therefore, DEMS-based films are the promising low-k materials which can be integrated in very large scale integration circuit as an inter-layer dielectric material.

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Periodical:

Advanced Materials Research (Volumes 233-235)

Pages:

2480-2485

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.233-235.2480

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Online since:

May 2011

Authors:

Yi Lung Cheng, Yi Shiung Lu, Tai Jung Chiu

Keywords:

Dielectric Constant, low-k, Precursor, Thermal Stability

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