The Effect of Be and Mn Co-Doping on the Magnetic and Transport Properties of Ferromagnetic Semiconductor Thin Films

Gang Xiang; Xi Zhang

doi:10.4028/www.scientific.net/AMR.239-242.127

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 239-242The Effect of Be and Mn Co-Doping on the Magnetic...

The Effect of Be and Mn Co-Doping on the Magnetic and Transport Properties of Ferromagnetic Semiconductor Thin Films

Abstract:

The co-doping effect of Be and Mn have been studied in the ferromagnetic semiconductor (Ga,Mn)As thin films. The measurement of magnetic properties shows that the Be doping decreases the Curie temperatures of the ferromagnetic sample due to defects formation. The transport studies show that the Be incorporation decreases the resistivity of the (Ga,Mn)As thin films. It is found that Be incorporation decreases the planar Hall resistance but increases the resistance transitions in the magnetic samples.

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Advanced Materials Research (Volumes 239-242)

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127-131

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https://doi.org/10.4028/www.scientific.net/AMR.239-242.127

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May 2011

Authors:

Gang Xiang, Xi Zhang

Keywords:

GaMnAs, Magnetic Semiconductor, Planar Hall Effect

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