The Effect of Be and Mn Co-Doping on the Magnetic and Transport Properties of Ferromagnetic Semiconductor Thin Films

Abstract:

Article Preview

The co-doping effect of Be and Mn have been studied in the ferromagnetic semiconductor (Ga,Mn)As thin films. The measurement of magnetic properties shows that the Be doping decreases the Curie temperatures of the ferromagnetic sample due to defects formation. The transport studies show that the Be incorporation decreases the resistivity of the (Ga,Mn)As thin films. It is found that Be incorporation decreases the planar Hall resistance but increases the resistance transitions in the magnetic samples.

Info:

Periodical:

Advanced Materials Research (Volumes 239-242)

Edited by:

Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He

Pages:

127-131

DOI:

10.4028/www.scientific.net/AMR.239-242.127

Citation:

G. Xiang and X. Zhang, "The Effect of Be and Mn Co-Doping on the Magnetic and Transport Properties of Ferromagnetic Semiconductor Thin Films", Advanced Materials Research, Vols. 239-242, pp. 127-131, 2011

Online since:

May 2011

Authors:

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.