Effects of Film Thickness on Microstructure and Ferroelectric Properties of Bi_3.15Nd_0.85Ti₃O₁₂ Thin Films Prepared by Sol-Gel Method

Abstract:

Bi_3.15Nd_0.85Ti₃O12 (BNT) thin films with different thicknesses (200, 270, 360, 450 and 540 nm) were prepared on Pt/Ti/SiO₂/Si substrates by sol–gel method. The effect of film thickness on the microstructure and ferroelectric properties of BNT thin films was investigated. All BNT thin films were consisted of a single phase of bismuth-layered perovskite structure. With increasing film thickness, grains gradually became larger, the remanent polarization (2P_r) firstly increased and then decreased, and the leakage current density showed opposite trend. The 360 nm-thick BNT film exhibited better electrical properties with 2P_r 26 µC/cm², coercive field (2E_c) 220 kV/cm, dielectric constant 345 (at 1 MHz) and low leakage current density.

• Periodical: Advanced Materials Research (Volumes 239-242)
• Pages: 1275-1278
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.239-242.1275
• Online since: May 2011
• Authors: Chang Yong Liu, Dongyun Guo, Chuan Bin Wang, Qiang Shen, Lian Meng Zhang
• Keywords: Bi_3.15Nd_0.85Ti₃O₁₂ Thin Film, Ferroelectric Property, Film Thickness, Microstructure, Sol-Gel Method

References

[1] J.F. Scott and C.A. Paz de Araujo: Science. Vol. 246 (1989), p.1400

[2] K. Angus: Nature. Vol. 401 (1999), p.658

[3] Y.H. Shin, I. Grinberg, I.W. Chen and A.M. Rappe: Nature. Vol. 449 (2007), p.881

[4] B.H. Park, B.S. Kang, S.D. Bu, T.W. Noh, J. Lee and W. Jo: Nature. Vol. 401 (1999), p.682

[5] D.Y. Guo, B.C. Wang, Q. Shen, L.M. Zhang, M.Y. Li, J. Liu: Appl. Phys. Lett. Vol. 93 (2008), p.262907

[6] M.S. Tomar, R.E. Melgarejo and S.P. Singh: Microelectron. J. Vol. 36 (2005), p.574

[7] J.L. Pineda-Flores, E. Chavira, J. Reyes-Gasga, A.M. Gonzalez and A. Huanosta-Tera: J. Eur. Ceram. Vol. 23 (2003), p.839

[8] D.Y. Guo, M.Y. Li, L. Pei, B.F. Yu, G.Z. Wu, X.Z. Zhao, Y.B. Wang and J. Yu: J. Phys. D: Appl. Phys. Vol. 39 (2006), p.5033

[9] T. Watanabe, H. Funakubo, M. Osada, H. Uchida and I. Okada: J. Appl. Phys. Vol. 98 (2005), p.024110

[10] D.Y. Guo, M.Y. Li, J. Liu, L. J. Fu, J. Wang, B. F. Yu and B. Yang: Mat. Sci. Eng.B-Solid. Vol.142 (2007), p.135.

[11] R. E. Melgarejo, M. S. Tomar, S. Bhaskar, P. S. Dobal and R. S. Katiyar: Appl. Phys. Lett. Vol. 81 (2002), p.2611.

DOI: 10.1063/1.1511542

[12] H. Matruda, S. Ito and I.Takashi: Appl. Phys. Lett. Vol. 83 (2003), p.5023

[13] D.Y. Guo, L.M. Zhang, M.Y. Li, j. Liu and B.F. Yu: J. Am. Cream. Soc. Vol. 91 (2008), p.3280

[14] H. Yang, N.A. Suvorova, M. Jain, B.S. Kang, Y. Li, M.E. Hawley, P.C. Dowden and C.J. Lu: Appl. Phys. Lett. Vol. 90(2007), p.232909

[15] C.R. Cho, W.J. Lee, B.G. Yu and B.W. Kim: J. Appl. Phys. Vol. 86 (1999), p.2700

[16] X.S. Gao and J. Wang: J. electroceram. Vol. 16 (2006), p.477

[17] X.S. Gao and J.wang: J. Appl. Phys. Vol. 99 (2006), p.074103

[18] M. Liao, X.L. Zhong, Y. Qiao, J.B. Wang, Y.C. Zhou and H. Liao: J. Alloys. Compd. Vol. 478 (2009), p.331.

[19] K.T. Kim, S.H. Song and C.I. Kim: J. Vac. Sci. Technol. A. Vol. 22 (2004), p.1315

[20] H. N. Lee, D. Hesse, N. Zakharov and U. Gosele: Science. Vol. 296 (2002), p. (2006)

[21] G. D. Hu: J. Appl. Phys. Vol. 100 (2006), p.096109

[22] G. D. Hu, S. H. Fan, and X. Cheng: J. Appl. Phys. Vol. 101 (2007), p.054111

[23] J.S. Zhu, X.B. Zhang, Y.F. Zhu and S.B. Desu: J. Appl. Phys. Vol. 83 (1998), p.1610