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Porous Silicon Modification with ZnO Films Electro-Deposited from Zinc Nitrate Aqueous Solution by Pulsed Current of Rectangular Wave

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Abstract:

The pulsed current of rectangular wave was used to electrolyzing zinc nitrate aqueous solution for the purpose of preparation of a transparent zinc oxide (ZnO) film by cathodic deposition. The current density of rectangular wave was 0.2 and 1.0 mA/cm2 , respectively. The former plays a role to deposit homogenous ZnO particles on the substrate surface and the latter plays the role to promote further growth of the particles and film formation. The structural and optical characterizations of the deposited films were performed with x-ray diffraction, scanning electron microscope, and measurements of optical absorption in UV-vis range. Similar technique has been used to modify as prepared porous silicon, resulting a green photoluminescence after 1 h annealing at 1273 K under oxygen atomsphere.

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Advanced Materials, CEAM 2011 View Preview

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Periodical:

Advanced Materials Research (Volumes 239-242)

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150-155

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https://doi.org/10.4028/www.scientific.net/AMR.239-242.150

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Online since:

May 2011

Authors:

Lu Sheng Chen, Yan Yan Liu, Yan Ping Ban, Huai Xiang Li

Keywords:

Electrodeposited, Porous Silicon, Pulsed Current, Surface Modification

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