Porous Silicon Modification with ZnO Films Electro-Deposited from Zinc Nitrate Aqueous Solution by Pulsed Current of Rectangular Wave

Abstract:

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The pulsed current of rectangular wave was used to electrolyzing zinc nitrate aqueous solution for the purpose of preparation of a transparent zinc oxide (ZnO) film by cathodic deposition. The current density of rectangular wave was 0.2 and 1.0 mA/cm2 , respectively. The former plays a role to deposit homogenous ZnO particles on the substrate surface and the latter plays the role to promote further growth of the particles and film formation. The structural and optical characterizations of the deposited films were performed with x-ray diffraction, scanning electron microscope, and measurements of optical absorption in UV-vis range. Similar technique has been used to modify as prepared porous silicon, resulting a green photoluminescence after 1 h annealing at 1273 K under oxygen atomsphere.

Info:

Periodical:

Advanced Materials Research (Volumes 239-242)

Edited by:

Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He

Pages:

150-155

DOI:

10.4028/www.scientific.net/AMR.239-242.150

Citation:

L. S. Chen et al., "Porous Silicon Modification with ZnO Films Electro-Deposited from Zinc Nitrate Aqueous Solution by Pulsed Current of Rectangular Wave", Advanced Materials Research, Vols. 239-242, pp. 150-155, 2011

Online since:

May 2011

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Price:

$35.00

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