Formation of Nano-Textured Silicon Surface Layer (or Nanowires) by Silver Ion-Assisted Etching

J Tang; Hong Yan Zhang; Z.Q Ma

doi:10.4028/www.scientific.net/AMR.287-290.265

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 287-290Formation of Nano-Textured Silicon Surface Layer...

Formation of Nano-Textured Silicon Surface Layer (or Nanowires) by Silver Ion-Assisted Etching

Abstract:

To obtain an ultralow surface reflectance and reach broadband antireflection effects,in this paper, silicon nanowires (SiNWs) layer has been fabricated by low-cost and easy-made silver-assisted etching techniques.The morphologies, reflectance and surface recombination of the samples were separately characterized. The ultralow reflectance below 3% from 300 to 800 nm under normal incidence has been realized in the case of ~ 1 μm long SiNWs whose geometry structures approximate to multi-layer gratings stack and the refractive index gradually increases from the top to the bottom of substrate. However, surface recombination of SiNWs deteriorates due to numerous dangling bonds and residual silver. Therefore, a trade-off between antireflection effect and recombination loss is the key to the electronic device.

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Advanced Materials Research (Volumes 287-290)

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265-269

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https://doi.org/10.4028/www.scientific.net/AMR.287-290.265

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Online since:

July 2011

Authors:

J Tang, Hong Yan Zhang, Z.Q Ma

Keywords:

Broadband Antireflection, Photovoltaic Application, Si Nanowire, Silver-Assisted Etching

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