A Novel Amorphous SiGe Material Used in CMOS Device

Abstract:

In this paper, we propose a novel material- amorphous silicon germanium(a-SiGe). The a-SiGe film was formed by PECVD at a low temperature and a low frequency. By adjusting the fraction x of Ge in Si_1-xGe_x, optimal SiGe bandgap was achieved. We used amorphous silicon germanium alloy as MOSFET source/drain. The parameter of MOSFET shows that, as the fraction increases, the drain-to-source breakdown voltage increases. With reduction of the minority carrier inject ratio, the current gain β of parasitic BJT in MOSFET was reduced greatly, which eliminates the limit of the breakdown voltage of the device.

• Periodical: Advanced Materials Research (Volumes 291-294)
• Pages: 465-468
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.291-294.465
• Online since: July 2011
• Authors: Wei Cui, Shi Lu Xu, Ping Li, Ting Ma, Yong Hui Yang
• Keywords: Amorphous, Bandgap, Parasitic, Silicon Germanium

References

[1] Scott E. Thompson et al., IEEE Transactions on ED Vol51 No 11 (2004), p.(1970)

[2] Y.S. Kim et al., Proceedings of ESSDERC, p.305 (2005).

[3] Arllend M. Perez et al., Optical Engineering 44(4), 043801,(2005)

[4] W. Luft and Y.S. Tsuo Marcel Dekker, New York (1993)

[5] Hoon Choi, et al. , Extended Abstracts of International Workshop on Junction Technology (2002)