A Novel Amorphous SiGe Material Used in CMOS Device
In this paper, we propose a novel material- amorphous silicon germanium(a-SiGe). The a-SiGe film was formed by PECVD at a low temperature and a low frequency. By adjusting the fraction x of Ge in Si1-xGex, optimal SiGe bandgap was achieved. We used amorphous silicon germanium alloy as MOSFET source/drain. The parameter of MOSFET shows that, as the fraction increases, the drain-to-source breakdown voltage increases. With reduction of the minority carrier inject ratio, the current gain β of parasitic BJT in MOSFET was reduced greatly, which eliminates the limit of the breakdown voltage of the device.
Yungang Li, Pengcheng Wang, Liqun Ai, Xiaoming Sang and Jinglong Bu
W. Cui et al., "A Novel Amorphous SiGe Material Used in CMOS Device", Advanced Materials Research, Vols. 291-294, pp. 465-468, 2011