A Novel Amorphous SiGe Material Used in CMOS Device

Abstract:

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In this paper, we propose a novel material- amorphous silicon germanium(a-SiGe). The a-SiGe film was formed by PECVD at a low temperature and a low frequency. By adjusting the fraction x of Ge in Si1-xGex, optimal SiGe bandgap was achieved. We used amorphous silicon germanium alloy as MOSFET source/drain. The parameter of MOSFET shows that, as the fraction increases, the drain-to-source breakdown voltage increases. With reduction of the minority carrier inject ratio, the current gain β of parasitic BJT in MOSFET was reduced greatly, which eliminates the limit of the breakdown voltage of the device.

Info:

Periodical:

Advanced Materials Research (Volumes 291-294)

Edited by:

Yungang Li, Pengcheng Wang, Liqun Ai, Xiaoming Sang and Jinglong Bu

Pages:

465-468

DOI:

10.4028/www.scientific.net/AMR.291-294.465

Citation:

W. Cui et al., "A Novel Amorphous SiGe Material Used in CMOS Device", Advanced Materials Research, Vols. 291-294, pp. 465-468, 2011

Online since:

July 2011

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Price:

$35.00

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