Structural, Electrical and Optical Properties of Li-Doped ZnO Thin Films Influenced by Annealing Oxygen Pressure

Abstract:

Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and In-situ annealing. The structural, electrical and optical properties of Li-doped ZnO films strongly depend on the annealing oxygen pressure. XRD and AFM analysis indicate that the ZnO films possess a good crystallinity with c-axis orientation, uniform thickness and dense surface. Optical transmission spectra show a high transmittance (~85%) in the visible region. Hall measurement demonstrates that ZnO films have p-type conduction with a Hall mobility of 5.0 cm²/Vs, resistivity of 0.97Ωcm and carrier concentration of 1.60×10¹⁷cm^-3 when annealing oxygen pressure is 1Pa.

• Periodical: Advanced Materials Research (Volumes 299-300)
• Pages: 530-533
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.299-300.530
• Online since: July 2011
• Authors: Li Dan Tang, Bing Wang, Jian Zhong Wang
• Keywords: P Type Conduction, Radio-Frequency Magnetron Sputtering (RF-MS), Thin Film

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