Studying the Structure and Semiconductor Properties of Passive Film on 316SS by XPS and Capacitance Measurement

Abstract:

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In borate buffer solution, anodic oxide passive film was formed on 316SS at 0.6 VSCE. Chemical composition and semiconductor properties of the film were studied by XPS and capacitance measurement. It’s determined from the results that the film has duplex structure with inner oxide layer and outer hydroxide layer. The inner layer behaves as p-type semiconductor, while the outer layer shows n-type semiconductor. A p-n junction is formed at the interface of outer and inner layer, and it plays an important role in the protective effect on the metal matrix.

Info:

Periodical:

Advanced Materials Research (Volumes 311-313)

Edited by:

Zhongning Guo

Pages:

1021-1026

DOI:

10.4028/www.scientific.net/AMR.311-313.1021

Citation:

F. Yang and G. X. Yang, "Studying the Structure and Semiconductor Properties of Passive Film on 316SS by XPS and Capacitance Measurement", Advanced Materials Research, Vols. 311-313, pp. 1021-1026, 2011

Online since:

August 2011

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Price:

$35.00

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