Studying the Structure and Semiconductor Properties of Passive Film on 316SS by XPS and Capacitance Measurement

Feng Yang; Gen Xi Yang

doi:10.4028/www.scientific.net/AMR.311-313.1021

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 311-313Studying the Structure and Semiconductor...

Studying the Structure and Semiconductor Properties of Passive Film on 316SS by XPS and Capacitance Measurement

Abstract:

In borate buffer solution, anodic oxide passive film was formed on 316SS at 0.6 VSCE. Chemical composition and semiconductor properties of the film were studied by XPS and capacitance measurement. It’s determined from the results that the film has duplex structure with inner oxide layer and outer hydroxide layer. The inner layer behaves as p-type semiconductor, while the outer layer shows n-type semiconductor. A p-n junction is formed at the interface of outer and inner layer, and it plays an important role in the protective effect on the metal matrix.

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Advanced Materials Research (Volumes 311-313)

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1021-1026

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.311-313.1021

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Online since:

August 2011

Authors:

Feng Yang, Gen Xi Yang

Keywords:

Bipolar, Capacitance Measurement, Passive Films, XPS

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