A Simple and Sufficient Method to Fabricate ZnO Nanowire Thin-Film Transistors

Zhen Qing Dai; Bing Hui; Ya Fei Zhang

doi:10.4028/www.scientific.net/AMR.335-336.451

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 335-336A Simple and Sufficient Method to Fabricate ZnO...

A Simple and Sufficient Method to Fabricate ZnO Nanowire Thin-Film Transistors

Abstract:

Large-scale fabrication of ZnO nanowire (NW) based devices with a low cost process is a key issue in practical application. In this paper, we report a simple and sufficient self-assembly process to prepare highly dense, uniform ZnO NW films. In this process, the NWs are modified with the aminopropyltriethoxy silane (APTES) to form the positively charged amine-terminated layer, so they are adsorbed on negatively charged SiO₂/Si substrates to form ZnO NW films by the electrostatic interaction in aqueous solution. Nanowire thin-film transistors (NW-TFTs) based on the prepared ZnO NW films are fabricated. A typical NW-TFT exhibited a current on/off ratio of 2.7×10⁵, a transconductance of 546 nS and a field-effect mobility of 8.9 cm²/V•s. This study may pave the way toward large-scale fabrication of ZnO NW based devices with simple, sufficient and low cost process.

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Advanced Materials Research (Volumes 335-336)

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451-454

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https://doi.org/10.4028/www.scientific.net/AMR.335-336.451

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September 2011

Authors:

Zhen Qing Dai, Bing Hui, Ya Fei Zhang

Keywords:

Self-assembly Process, Thin Film Transistor, ZnO Nanowire

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